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Preliminary Datasheet
RJK5020DPK
Silicon N Channel MOS FET High Speed Power Switching
Features
Low on-resistance Low leakage current High speed switching REJ03G1263-0300 Rev.3.00 Jun 30, 2010
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
D
G
1. Gate 2. Drain (Flange) 3. Source
1
S
2
3
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C 3. STch = 25C, Tch 150C Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 ch-c Tch Tstg Ratings 500 30 40 120 40 120 12.5 8.6 200 0.625 150 -55 to +150 Unit V V A A A A A mJ W C/W C C
REJ03G1263-0300 Rev.3.00 Jun 30, 2010
Page 1 of 6
RJK5020DPK
Preliminary
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Min 500 -- -- 3.0 -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 0.102 5150 525 55 52 115 180 125 126 26 54 0.90 450 Max -- 1 0.1 4.5 0.118 -- -- -- -- -- -- -- -- -- -- 1.50 -- Unit V A A V pF pF pF ns ns ns ns nC nC nC V ns Test conditions ID = 10 mA, VGS = 0 VDS = 500 V, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 20 A, VGS = 10 V Note4 VDS = 25 V VGS = 0 f = 1 MHz ID = 20 A VGS = 10 V RL = 12.5 Rg = 10 VDD = 400 V VGS = 10 V ID = 40 A IF = 40 A, VGS = 0 Note4 IF = 40 A, VGS = 0 diF/dt = 100 A/s
REJ03G1263-0300 Rev.3.00 Jun 30, 2010
Page 2 of 6
RJK5020DPK
Preliminary
Main Characteristics
Power vs. Temperature Derating
400 1000 300 100 30 10 3 Operation in this 1 area is limited by
RDS(on)
Maximum Safe Operation Area
Pch (W)
ID (A)
300
Channel Dissipation
0 PW s 10 (1 = 1 0 sh s ot) ms
1
200
Drain Current
100
0.3 0.1 0.03 0.01 Ta = 25C 1 3 10 30 100 300 1000
0
50
100
150
200
Case Temperature
Tc (C)
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
50 10 V 5.5 V 5.7 V 5.3 V 7V 100 50
Typical Transfer Characteristics
VDS = 10 V Pulse Test
ID (A)
ID (A) Drain Current
40
20 10 5 2 1 0.5 0.2 0.1 Tc = 75C 25C -25C 0 2 4 6 8 10
30
Drain Current
20
VGS = 4.9 V
10 Pulse Test 0 4 8 12 16 20
Drain to Source Voltage
VDS (V)
Gate to Source Voltage
VGS (V)
Drain to Source on State Resistance RDS(on) ()
1 VGS = 10 V 0.5
Static Drain to Source on State Resistance RDS(on) ()
Static Drain to Source on State Resistance vs. Drain Current
Static Drain to Source on State Resistance vs. Temperature
0.5 VGS = 10 V Pulse Test
0.4 ID = 40 A 20 A 0.2 10 A 0.1 0 -25
0.2 0.1 0.05
0.3
0.02 0.01 1 3 10 30 Pulse Test 100 300 1000
0
25
50
75
100 125 150
Drain Current
ID (A)
Case Temperature
Tc (C)
REJ03G1263-0300 Rev.3.00 Jun 30, 2010
Page 3 of 6
RJK5020DPK
Body-Drain Diode Reverse Recovery Time
1000 100000 30000
Preliminary
Typical Capacitance vs. Drain to Source Voltage
VGS = 0 f = 1 MHz Ciss
Reverse Recovery Time trr (ns)
500 200 100 50 20 10 5 2 1 1 3 10 30 100 300 1000 di / dt = 100 A / s VGS = 0, Ta = 25C
Capacitance C (pF)
10000 3000 1000 300 100 30 10 0 100
Coss
Crss
200
300
Reverse Drain Current
IDR (A)
Drain to Source Voltage
VDS (V)
Dynamic Input Characteristics
VDS (V) IDR (A)
ID = 40 A VDD = 100 V 250 V 400 V VDS
Reverse Drain Current vs. Source to Drain Voltage
VGS (V)
16 50
800
VGS
40
600
12
Drain to Source Voltage
Gate to Source Voltage
Reverse Drain Current
30
400
8
20 10 5, 10 V VGS = 0, -5 V Pulse Test 0 0.4 0.8 1.2 1.6 2.0
200
VDD = 400 V 250 V 100 V 40 80 120 160
4
0 0 200
Gate Charge
Qg (nC)
Source to Drain Voltage
VSD (V)
Gate to Source Cutoff Voltage vs. Case Temperature
5 VDS = 10 V 4 ID = 10 mA 1 mA 3
Gate to Source Cutoff Voltage VGS(off) (V)
2 0.1 mA 1 0 -25
0
25
50
75
100 125 150
Case Temperature
Tc (C)
REJ03G1263-0300 Rev.3.00 Jun 30, 2010
Page 4 of 6
RJK5020DPK
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance s (t)
3 Tc = 25C 1 D=1 0.5 0.3
0.2
Preliminary
0.1
0.1
ch - c(t) = s (t) * ch - c ch - c = 0.625C/W, Tc = 25C PDM
pu lse
0.05
0.03
0.02 1 0.0
1s
D= PW T
PW T
t ho
0.01 10
100
1m
10 m
100 m
1
10
Pulse Width
PW (s)
Switching Time Test Circuit
Vin Monitor D.U.T. RL 10 Vin 10 V VDD = 250 V Vin Vout 10% 10% Vout Monitor
Waveform
90%
10%
90% td(on) tr
90% td(off) tf
REJ03G1263-0300 Rev.3.00 Jun 30, 2010
Page 5 of 6
RJK5020DPK
Preliminary
Package Dimensions
Package Name TO-3P JEITA Package Code SC-65 RENESAS Code PRSS0004ZE-A Previous Code TO-3P / TO-3PV MASS[Typ.] 5.0g
5.0 0.3
Unit: mm
1.5
15.6 0.3
4.8 0.2
0.5
1.0
3.2 0.2
14.9 0.2
19.9 0.2
1.6 1.4 Max 2.0 2.8
2.0
1.0 0.2 3.6 0.9 1.0
18.0 0.5
0.6 0.2
5.45 0.5
5.45 0.5
Ordering Information
Part No. RJK5020DPK-00-T0 Note: Quantity 360 pcs Box (Tube) Shipping Container
For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
REJ03G1263-0300 Rev.3.00 Jun 30, 2010
0.3
Page 6 of 6
Notice
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